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Isimiso se-sputtering target magnetron sputtering

2021年8月31日

 

Isimiso se-Magnetron sputtering: engeza inkambu kazibuthe orthogonal nensimu kagesi phakathi kwelitshe elichithwe (cathode) kanye ne-anode, futhi ilitshe lokukhalima ligcwaliswa ngegesi edingekayo yokungenisa (imvamisa i-Ar gas) ekamelweni eliphezulu lokuphumula. Uzibuthe onomphela wakha 250-350 Inkambu kazibuthe kaGauss ebusweni bento eqondiwe, futhi yakha inkambu ye-orthogonal kagesi enenkambu kagesi ene-high-voltage..

Ngaphansi kwesenzo senkambu kagesi, I-Ar igesi i-ion ion nama-electron amahle. Kusetshenziswa i-voltage ethile ephezulu engalungile kulitshe. Ama-elektroni akhishwa kulitshe athintwa amandla kazibuthe kanye namathuba e-ionization wokusebenza kwegesi okwenyukayo, ukwakha i-plasma enamandla kakhulu eduze kwe-cathode. Ngaphansi kwesenzo samandla kaLorentz, Ama-ion ayashesha afike endaweni ebhekiswe kuyo bese ehlasela indawo okuqondiswe kuyo ngejubane elikhulu, ukuze ama-athomu akhiphe ilitshe alandele umgomo wokuguqulwa komfutho futhi andizele kude nendawo ekhonjiwe ngamandla aphezulu we-kinetic. Substrate sebethule ku ifilimu. Imagnetron sputtering ngokuvamile ihlukaniswe izinhlobo ezimbili: Ukuxubha kwe-DC nokukhishwa kwemvamisa yomsakazo. Umgomo wemishini yokuphalaza ye-DC ulula. Lapho kukhishwa insimbi, isilinganiso saso futhi siyashesha..

Ububanzi besicelo sokuphazwa kwemvamisa yomsakazo bukhulu kakhulu. Ngaphezu kokukhalaza izinto zokuqhuba, izinto ezingezona ezokuqhuba nazo zingakhanywa. Ngesikhathi esifanayo, futhi ingaqhuba ukukhipha okusebenzayo ukulungisa izinto ezihlanganisiwe njengama-oxide, ama-nitride, nama-carbides..Lapho imvamisa yokuvama komsakazo wetarget sputtering yanda, kuba yi-microwave plasma sputtering. Okwamanje, i-electron cyclotron resonance (ECR) uhlobo lwe-microwave plasma sputtering luvame ukusetshenziswa..

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