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Okuhlosiwe kwe-Magnetron sputtering

2021年10月29日

1) Isimiso se-Magnetron sputtering.
Esigxotsheni sethagethi esihlutshiwe (cathode) kanye ne-anode phakathi kokwengezwa kwensimu ye-orthogonal kazibuthe nekagesi, ekamelweni eliphezulu elinomshini ogcwele igesi engenalutho edingekayo (imvamisa i-Ar gas), ozibuthe unomphela endaweni okuhlosiwe ukuze bakhe insimu kazibuthe 250 ~ 350 gauss, nenkambu kagesi yamandla aphezulu ukuze yakhe inkambu ye-orthogonal electromagnetic. Ngaphansi kwesenzo senkambu kagesi, I-Ar gas i-ioned ibe ama-ion nama-electron, okuhlosiwe kwengezwe nge-voltage ethile engalungile ephezulu, ama-electron asuka kulokho okuhlosiwe angaphansi kwesenzo sensimu kazibuthe kanye nokunyuswa kwe-ionisation yegesi esebenzayo, kwakhiwa i-plasma ephakeme kakhulu eduze kwe-cathode, ama-Ar ion asheshiswa ngaphansi kwesenzo samandla we-Lorentz futhi andizele endaweni okuqondiswe kuyo, ibhomu indawo okuhloswe kuyo ngesivinini esikhulu kakhulu, ukuze ama-athomu ahlakazeke aphume kulokho okuhlosiwe alandele umgomo wokuguqulwa kwesivinini esiphezulu. Imagnetron sputtering ngokuvamile ihlukaniswe izinhlobo ezimbili: I-DC sputtering kanye ne-RF sputtering, lapho umgomo we-DC sputtering equipment ulula futhi izinga liyashesha lapho kuphafazwa izinsimbi. I-RF sputtering, Ngokwesinye isandla, ingasetshenziswa kuhlelo olubanzi lwezinhlelo zokusebenza futhi ingafafaza izinto ezingahlanganisi ngaphezu kwezinto ezisebenza ngogesi, kanye ne-sputtering esebenzayo yokulungiswa kwezinto ezihlanganisiwe njengama-oxides, ama-nitride nama-carbides. Uma imvamisa ye-RF inyuswa iba yi-microwave sputtering ye-plasma, namuhla, okusetshenziswa kakhulu yi-electron cyclotron resonance (ECR) thayipha i-microwave plasma sputtering.
2) Izinhlobo zokuhloswe kwe-magnetron sputtering.
Insimbi yokuchichima kwensimbi, ingxubevange sputtering enamathela target, Ceramic sputtering enamathela ilitshe, hlanganisa i-ceramic sputtering target, I-carbide ceramic sputtering target, I-fluoride ceramic sputtering target, Ithagethi ye-nitride ceramic sputtering, ilitshe le-oxide ceramic, I-selenide ceramic sputtering target, i-silicide ilitshe lokukhwehlela kwe-ceramic, I-sulfide ceramic sputtering target, i-telluride ilitshe le-sputtering target, ezinye izinhloso ze-ceramic, i-chromium-doped i-silicon oxide ceramic targets (I-Cr-SiO), Okuqondiwe kwe-indium phosphide (I-InP), ukuhola izinhloso ze-arsenide (Ama-PbAs), Izinhloso ze-indium arsenide (Ama-InAs). [2]
I-Application Areas Editor Voice
Njengoba sonke sazi, inkambiso yokuthuthukiswa kobuchwepheshe bezinto ezihlosiwe ihlobene eduze nenkambiso yokuthuthukiswa kobuchwepheshe befilimu emincane embonini yesicelo esezansi nomfula, futhi njengoba imboni yezicelo ithuthukisa ubuchwepheshe emikhiqizweni yefilimu emincane noma izingxenye, ubuchwepheshe bezinto ezihlosiwe kufanele futhi bushintshe. Ngokwesibonelo, Abakhiqizi be-Ic. Ezikhathini zamuva ezinikezelwe ekuthuthukisweni kwezintambo zethusi eziphikisanayo eziphansi, kulindeleke ukuthi ithathe indawo yefilimu yokuqala ye-aluminium eminyakeni embalwa ezayo, ukuze ukuthuthukiswa kwethagethi yethusi kanye nezinto eziqondiswe kuzo ezidingekayo zongqimba kuzophuthuma. Ngaphezu kwalokho, eminyakeni yakamuva, isibonisi sephaneli esicaba (FPD) ithathe indawo enkulu yeshubhu le-cathode ray yoqobo (I-CRT) i-computer qapha kanye nemakethe yethelevishini. Futhi izokwandisa kakhulu ubuchwepheshe kanye nesidingo semakethe sezinhloso ze-ITO. Ngaphezu kwalokho, kubuchwepheshe bokugcina. Ukuminyana okuphezulu, high-capacity hard disk, ukuminyana okuphezulu okubhalwe kabusha kwe-optical disc isidingo siyaqhubeka nokwanda. Konke lokhu kuholele ekushintsheni kwesidingo semboni yesicelo sezinto ezihlosiwe. Ngokulandelayo sizokwethula izindawo ezisetshenziswa kakhulu zezinto ezihlosiwe, kanye nokuthambekela kokuthuthukiswa kwezinto ezihlosiwe kulezi zindawo.
Microelectronics
Imboni ye-semiconductor inezidingo zekhwalithi ezifunwa kakhulu zamafilimu ahlosiwe ahlabayo anoma iyiphi imboni yezicelo. Namuhla, ama-silicone wafers afinyelela phezulu 12 amasentimitha (300 iziqephu) ziyakhiqizwa. kuyilapho ububanzi bokuxhunywana buncipha. Izidingo zabakhiqizi be-silicon wafer osayizi abakhulu, ukuhlanzeka okuphezulu, ukuhlukaniswa okuphansi kanye nezinhlamvu ezinhle kudinga ukuthi okuhlosiwe okwenziwe kube ne-microstructure engcono. Ububanzi bezinhlayiya zekristalu nokufana kwethagethi kukhonjwe njengento eyinhloko ethinta izinga lokumiswa kwefilimu.. Ngaphezu kwalokho, ukuhlanzeka kwefilimu kuncike kakhulu ekuhlanzekeni kwalowo ohlosiwe. Esikhathini esedlule, a 99.995% (4I-N5) Ithagethi yethusi emsulwa ingase ikwazi ukuhlangabezana nezidingo zabakhiqizi be-semiconductor ngenqubo engu-0.35pm., kodwa ayikwazi ukuhlangabezana nezidingo zenqubo yanamuhla engu-0.25um, ngenkathi 0.18um} ubuciko noma inqubo engu-0.13m yabangalinganisiwe izodinga ukuhlanzeka okuhlosiwe kwe 5 noma i-6N noma ngaphezulu. Ithusi uma iqhathaniswa ne-aluminium, ithusi linokumelana okuphezulu kwe-electromigration kanye ne-resistivity ephansi ukuhlangabezana! Inqubo kakhondatha idinga izintambo ezincane ze-micron ngaphansi kuka-0.25um kodwa iza nezinye izinkinga: amandla okunamathela ethusi ezintweni ze-organic dielectric aphansi. Futhi kulula ukusabela, okuholela ekusetshenzisweni komugqa wokuxhumana we-chip wethusi ugqwalile futhi uphukile. Ukuze kuxazululwe lezi zinkinga, isidingo sokusetha isendlalelo sokuvimbela phakathi kongqimba lwethusi ne-dielectric. Izinto zongqimba zokuvimbela ngokuvamile zisetshenziswa indawo ephezulu yokuncibilika, ukumelana okuphezulu kwensimbi nezinhlanganisela zayo, ngakho-ke ubukhulu bengqimba yokuvimbela bungaphansi kuka-50nm, kanye nokusebenza kokunamathela kwe-copper kanye ne-dielectric material kuhle. Ukuxhumana kwe-Copper kanye nokuxhumana kwe-aluminium kwe-blocking layer material kuhlukile. Izinto ezintsha okuhloswe ngazo zidinga ukuthuthukiswa. Ukuxhumana kwethusi kwesendlalelo sokuvimbela ngezinto eziqondiwe ezihlanganisa i-Ta, UW, TaSi, WSi, njll.. Kodwa Ta, W bayizinsimbi eziphikisayo. Ukukhiqiza kunzima uma kuqhathaniswa, manje ufunda i-molybdenum, i-chromium nezinye igolide lase-Taiwan njengezinto ezihlukile.
Okwemibukiso
Imibukiso yephaneli eyisicaba (FPD) zibe nomthelela omkhulu ku-monitor yekhompiyutha kanye nemakethe yethelevishini phakathi neminyaka, ikakhulukazi ngesimo se-cathode ray tubes (I-CRT), okuzophinde kuqhubekisele phambili ubuchwepheshe kanye nesidingo semakethe kokuhlosiwe kwe-ITO. Kunezinhlobo ezimbili zokuhloswe kwe-iTO ezitholakalayo namuhla. Enye ukusetshenziswa kwe-nano-state indium oxide kanye ne-tin oxide powder exutshwe ne-sintered, enye iwukusetshenziswa kwethagethi ye-indium tin alloy. Amathagethi e-indium-tin alloy angasetshenziselwa amafilimu amancanyana e-ITO nge-DC reactive sputtering, kodwa indawo okuhloswe kuyo izokhipha oksijini futhi ithinte izinga lokufafaza, futhi akulula ukuthola usayizi omkhulu wethagethi yegolide yase-Taiwan. Kulezi zinsuku, indlela yokuqala ngokuvamile yamukelwa ukukhiqiza okuhlosiwe kwe-ITO, usebenzisa i-L}I-IRF reactive sputtering coating. Inesivinini sokubeka esisheshayo. Futhi ingakwazi ukulawula ngokunembile ukushuba kwefilimu, ukuqhuba okuphezulu, ukuvumelana okuhle kwefilimu, nokunamathela okuqinile ku-substrate, njll. l. Kodwa ubunzima bokukhiqiza okuhlosiwe, lokho kungenxa yokuthi i-indium oxide ne-tin oxide akulula ukucwilisa ndawonye. ZrO2, I-Bi2O3 kanye ne-CeO ngokuvamile zisetshenziswa njengezithasiselo ze-sintering futhi ziyakwazi ukuthola okuhlosiwe ngokuminyana 93% uku 98% wenani lemfundiso. Ukusebenza kwamafilimu e-ITO akhiwe ngale ndlela kuncike kakhulu ezithasiselweni. Ososayensi baseJapan basebenzisa i-Bizo njengesengezo, I-Bi2O3 incibilika ku-820Cr futhi iye yashintshashintsha ngaphezu kwezinga lokushisa le-sintering elingu-l500°C. Lokhu kuvumela i-TO target emsulwa ukuthi itholakale ngaphansi kwezimo ze-liquid sintering. Ngaphezu kwalokho, i-oxide impahla eluhlaza edingekayo akudingeki ukuthi ibe ama-nanoparticles, okwenza kube lula inqubo yokuqala. Ku- 2000, IKhomishana Kazwelonke Yokuhlela Intuthuko, uMnyango Wezesayensi Nobuchwepheshe Wezesayensi Nobuchwepheshe ku “ukuthuthukiswa kwamanje okubalulekile kwemboni yolwazi umhlahlandlela wezindawo ezibalulekile”, Impahla enkulu eqondiwe ye-ITO nayo ifakiwe.
Okokugcina
Kubuchwepheshe bokugcina, ukuthuthukiswa kwe-high-density, high-capacity hard disk idinga inani elikhulu lezinto zefilimu ezinkulukazi ze-magnetoresistive, kanye nefilimu eyinhlanganisela ye-CoF~Cu ye-multilayer iyisakhiwo sefilimu esikhulukazi esisetshenziswa kakhulu namuhla.. I-TbFeCo alloy target material edingekayo kumadiski kazibuthe isathuthukiswa, kanye namadiski kazibuthe enziwe kuwo anomthamo omkhulu wokugcina, impilo ende futhi ingasulwa ngokuphindaphindiwe ngaphandle kokuxhumana. Amadiski kazibuthe athuthukiswe namuhla anesakhiwo sefilimu esiyinhlanganisela ye-TbFeCo/Ta ne-TbFeCo/Al. I-engeli yokuzungezisa ye-Kerr yesakhiwo se-TbFeCo/AI iyafinyelela 58, kuyilapho i-TbFeCofFa ingaba seduze 0.8. Kutholwe ukuthi amandla kazibuthe aphansi wento ehlosiwe ephezulu ye-AC partial discharge voltage l imelana namandla kagesi..
Izinkumbulo ze-Germanium antimony telluride ezisekelwe esigabeni sokushintsha (PCM) babonise amandla amakhulu okuhweba njengobunye ubuchwepheshe benkumbulo ye-NOR uhlobo lwe-flash kanye nengxenye yemakethe ye-DRAM, kodwa, enye yezinselelo emgwaqeni wokukala ngokushesha ukuntuleka kwamaseli e-hermetic aphelele angakhiqizwa ukuze kuqhutshekwe nokunciphisa ukusetha kabusha kwamanje.. Ukusetha kabusha imisinga ephansi kunganciphisa ukusetshenziswa kwamandla enkumbulo, nwebisa impilo yebhethri futhi ukhuphule umkhawulokudonsa wedatha, zonke izici ezibalulekile ze-data-centric yanamuhla, umthengi ephathekayo kakhulu

 

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