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Iithagethi zokutshiza ngeMagnetron

2021年10月29日

1) Umgaqo wokutshiza wemagnetron.
Kwipali ekujoliswe kuyo esputtered (isiseko) kunye ne-anode phakathi kokongezwa kwe-orthogonal magnetic kunye nentsimi yombane, kwigumbi elinomshini ophezulu ogcwele irhasi efunekayo yokungena (ngesiqhelo iar), iimagnethi ezisisigxina kumphezulu wezinto ekujoliswe kuzo ukwenza umhlaba wemagnethi 250 ~ 350 gauss, ngommandla wombane ophezulu wombane ukwenza intsimi ye-orthogonal electromagnetic. Ngaphantsi kwesenzo sentsimi yombane, I-Ar gas ifakwe kwi-ioni kunye nee-electron, ekujoliswe kuko yongezwa ngevolthi ethile engalunganga ephezulu, ii-electron ezisuka ekujoliswe kuzo zixhomekeke kwisenzo sommandla wamagnetic kunye ne-ionisation yegesi esebenzayo yanda., iplasma yoxinaniso oluphezulu lwenziwa kufutshane necathode, ii-Ar ion zikhawuleza phantsi kwentshukumo yamandla eLorentz kwaye zibhabhe ukuya kwindawo ekujoliswe kuyo, ukubetha indawo ekujoliswe kuyo ngesantya esiphezulu kakhulu, ukuze iiathom ezisasazeke ziphume koko kujoliswe kuko zilandele umgaqo wenguquko yesantya ngokuphezulu.. Imagnetron sputtering ngokubanzi yahlulwe yaziindidi ezimbini: I-DC sputtering kunye ne-RF sputtering, apho umgaqo-nkqubo we-DC sputtering wezixhobo zilula kwaye izinga likhawuleza xa kuchithwa iintsimbi. RF sputtering, kwelinye icala, ingasetyenziswa kuluhlu olubanzi lwezicelo kwaye ingatshiza imathiriyeli engaqhubekiyo ukongeza kwizinto eziqhuba umbane., kunye nokutshiza okusebenzayo ukulungiselela ukulungiswa kwezinto ezixubeneyo ezifana neeoksidi, nitrides kunye khabhayithi. Ukuba ubuninzi be-RF bonyusiwe buba yi-microwave plasma sputtering, namhlanje, zihlala zisetyenziswa zii-electron cyclotron resonance (ECR) chwetheza i-microwave plasma sputtering.
2) Iintlobo zeethagethi ze-magnetron sputtering.
Metal meko meko ukutyabeka, ingxubevange meko meko ukutyabeka, Ceramic meko meko ukutyabeka, Ukujolisa ekujoliseni komgangatho weceramic, Izinto ekujoliswe kuzo ze-carbide ceramic, Ithagethi yokutshiza i-fluoride ceramic, Ithagethi ye-nitride ceramic sputtering, oxide ekujoliswe kuyo yodongwe, I-selenide yodongwe ekujoliswe kuyo, I-silicide yokujolisa ekujoliseni i-ceramic, I-sulfide ceramic sputtering ekujoliswe kuyo, Itaruride ityhubhu ekujoliswe kuyo, ezinye iithagethi zeceramic, Ithagethi ye-chromium-doped isilicon oxide ceramic (Cr-SiO), Iithagethi ze-indium phosphide (I-InP), khokela iithagethi ze-arsenide (I-PbAs), Iithagethi ze-indium arsenide (Kwii -As). [2]
IiNdawo zeSicelo soMhleli welizwi
Njengoko sonke sisazi, Intsingiselo yophuhliso lwetekhnoloji yezixhobo ekujoliswe kuzo inxulumene ngokusondeleyo kwindlela yophuhliso lobugcisa befilimu ebhityileyo kushishino lwesicelo esisezantsi, kwaye njengoko ishishini lesicelo liphucula itekhnoloji kwiimveliso zefilimu ezincinci okanye amacandelo, Iteknoloji yezinto ekujoliswe kuzo nayo kufuneka itshintshe. Umzekelo, Abavelisi be-Ic. Kumaxesha akutshanje anikezelwe ekuphuhliseni i-wiresistivity ephantsi ye-copper wiring, kulindeleke ukuba ithathe indawo yefilimu yokuqala yealuminiyam kule minyaka imbalwa izayo, ukuze kuphuhliswe iithagethi zobhedu kunye nezinto ekujoliswe kuzo ezifunekayo zezithintelo kuya kungxamiseka. Ukwengeza, kule minyaka yangoku, umboniso wepaneli tyaba (FPD) ithathe indawo enkulu yetyhubhu yecathode ray (CRT) esekelwe esweni computer kunye nemarike kamabonakude. Iza kwandisa kakhulu itekhnoloji kunye nemfuno yentengiso yeethagethi ze-ITO. Ukwengeza, kwiteknoloji yokugcina. Uxinaniso oluphezulu, ihard disk enomthamo ophezulu, uxinaniso oluphezulu olubhalwe kwakhona imfuno yediski ye-optical iyaqhubeka nokukhula. Zonke ezi zikhokelele kwiinguqu kwimfuno yoshishino lwesicelo kwizinto ezijoliswe kuzo. Koku kulandelayo siza kwazisa iindawo ezingundoqo zokusetyenziswa kwezinto ekujoliswe kuzo, kunye nentsingiselo yophuhliso lwemathiriyeli ekujoliswe kuyo kwezi ndawo.
Microelectronics
Umzi-mveliso we-semiconductor unezona mfuno zomgangatho zifuna kakhulu kwiifilim ekujoliswe kuzo ezigxekayo kulo naliphi na ishishini lesicelo. Namhlanje, amaqhekeza e-silicon ukuya phezulu 12 intshi (300 iziqendu) ziyaveliswa. ngelixa ububanzi boqhakamshelwano buyancipha. Iimfuno zabavelisi be-silicon bafer kubukhulu obukhulu, Ucoceko oluphezulu, ulwahlulo oluphantsi kunye neenkozo ezicolekileyo zifuna ukuba iithagethi ezenziweyo zibe ne-microstructure engcono. I-crystalline particle diameter kunye nokufana kwethagethi ichongiwe njengento ephambili echaphazela izinga lokubekwa kwefilimu.. Ukwengeza, ukucoceka kwefilimu kuxhomekeke kakhulu ekuhlambulukeni kwethagethi. Mandulo, a 99.995% (4N5) Ujoliso lobhedu olusulungekileyo lunokukwazi ukuhlangabezana neemfuno zabavelisi be-semiconductor kwinkqubo ye-0.35pm., kodwa ayikwazi ukuhlangabezana neemfuno zenkqubo yanamhlanje ye-0.25um, ngelixa i-0.18um} ubugcisa okanye inkqubo ye-0.13m ye-unmetered iya kufuna ukucoceka okujoliswe kuyo 5 okanye nokuba 6N okanye ngaphezulu. Ubhedu xa kuthelekiswa ne-aluminiyam, ubhedu unokumelana okuphezulu kwi-electromigration kunye ne-resistivity ephantsi ukuhlangabezana! Inkqubo yomqhubi idinga i-sub-micron wiring ngaphantsi kwe-0.25um kodwa izisa nezinye iingxaki: amandla okubambelela kobhedu kwizinto eziphilayo ze-dielectric ziphantsi. Kwaye kulula ukusabela, okukhokelela ekusetyenzisweni komgca woqhagamshelwano wobhedu we-chip udliwe kwaye wophukile. Ukwenzela ukusombulula ezi ngxaki, imfuneko yokumisela umaleko womqobo phakathi kobhedu kunye ne-dielectric layer. Izixhobo zomaleko ezithintelayo zisetyenziswa ngokubanzi kwindawo ephezulu yokunyibilika, ukumelana okuphezulu kwentsimbi kunye neekhompawundi zayo, ngoko ubukhulu bomgca wokuvimba bungaphantsi kwe-50nm, kunye nobhedu kunye ne-dielectric material adhesion performance ilungile. Unxibelelwano lwe-Copper kunye ne-aluminium yokudibanisa kwezinto ezithintelayo zihluke. Izixhobo ezitsha ekujoliswe kuzo kufuneka ziphuhliswe. Ukudityaniswa kobhedu komaleko okuthintela ngezinto ekujoliswe kuzo kubandakanya iTa, UW, TaSi, WSi, njl.. Kodwa Ta, W ziziintsimbi eziphikisayo. Ukuvelisa kunzima, ngoku ufunda imolybdenum, chromium kunye nenye igolide yaseTaiwan njengenye imathiriyeli.
Yemiboniso
Umboniso wephaneli ecaba (FPD) baye banempembelelo ebalulekileyo kwi-monitor yekhompyutheni kunye nemarike yethelevishini kwiminyaka, ubukhulu becala ikwimo yetyhubhu yeray ye-cathode (CRT), eya kuqhuba itekhnoloji kunye nemfuno yentengiso yeethagethi ze-ITO. Kukho iintlobo ezimbini zeethagethi ze-iTO ezikhoyo namhlanje. Enye kukusetyenziswa kwe-nano-state indium oxide kunye ne-tin oxide powder exutywe kunye ne-sintered, enye kukusetyenziswa kwethagethi ye-indium tin alloy. Iithagethi ze-Indium-tin alloy zingasetyenziselwa i-ITO iifilimu ezibhityileyo nge-DC reactive sputtering, kodwa indawo ekujoliswe kuyo iya ku-oxidise kwaye ichaphazele izinga lokutshiza, kwaye akukho lula ukufumana ubungakanani obukhulu bethagethi yegolide yaseTaiwan. Kule mihla, indlela yokuqala yamkelwa ngokubanzi ukuvelisa iithagethi ze-ITO, usebenzisa uL}IRF reactive sputtering coating. Inesantya sokubeka ngokukhawuleza. Kwaye inokulawula ngokuchanekileyo ubukhulu befilimu, Ukuqhuba okuphezulu, ukuhambelana kakuhle kwefilimu, kunye nokubambelela ngokuqinileyo kwi-substrate, njl. l. Kodwa ubunzima bemveliso yezinto ekujoliswe kuzo, Oku kungenxa yokuba i-indium oxide kunye ne-tin oxide akulula ukuba sinter kunye. ZrO2, I-Bi2O3 kunye ne-CeO zisetyenziswa ngokubanzi njengezongezo ze-sintering kwaye ziyakwazi ukufumana iithagethi ngokuxinana kwe 93% ukuya 98% yexabiso lethiyori. Ukusebenza kweefilimu ze-ITO ezenziwe ngolu hlobo kuxhomekeke kakhulu kwizongezo. Izazinzulu zaseJapan zisebenzisa iBizo njengesongezo, I-Bi2O3 inyibilika kwi-820Cr kwaye iye yaguquguquka ngaphaya kobushushu obutshisayo obuyi-l500°C.. Oku kwenza ukuba i-TO ekujoliswe kuyo ifumaneke phantsi kweemeko zesigaba solwelo. Ngapha koko, i-oxide ekrwada efunekayo ayifuni ukuba ibe yi-nanoparticles, eyenza lula inkqubo yokuqala. Kwi 2000, iKhomishini yoCwangciso loPhuhliso lweSizwe, UMphathiswa wezeNzululwazi nobuChwepheshe kwiNzululwazi neTekhnoloji kwi “uphuhliso lwangoku oluphambili lwesikhokelo solwazi lwemimandla engundoqo”, I-ITO imathiriyeli enkulu ekujoliswe kuyo nayo ibandakanyiwe.
Okokugcina
Kwiteknoloji yokugcina, ukuphuhliswa koxinzelelo oluphezulu, high-capacity hard disk ifuna inani elikhulu legiant magnetoresistive film materials, kunye ne-CoF~Cu ifilimu edibeneyo ye-multilayer sisixhobo sefilimu esisetyenziswa ngokubanzi kwi-magnetoresistive film namhlanje.. Imathiriyeli yethagethi ye-TbFeCo yealloy efunekayo kwiidiski zemagnethi isaphuhliswa ngakumbi, kunye neediski zemagneti ezenziwe kuyo zinomthamo ophezulu wokugcina, ubomi obude kwaye inokucinywa ngokuphindaphindiweyo ngaphandle koqhagamshelwano. Iidiski zemagneti eziphuhliswe namhlanje zinesakhiwo sefilimu edibeneyo ye-TbFeCo/Ta kunye ne-TbFeCo/Al.. I-angle yokujikeleza ye-Kerr yesakhiwo se-TbFeCo/AI sifikelela 58, ngelixa i-TbFeCofFa ingaba kufutshane ne 0.8. Kufunyaniswe ukuba ukungeneka kwemagnethi esezantsi kwesixhobo ekujoliswe kuso siphezulu i-AC inxenye yokukhupha ivoltheji l imelana namandla ombane..
I-Germanium antimony telluride esekelwe kwisigaba sokutshintsha iinkumbulo (PCM) babonise amandla okurhweba okubalulekileyo njengenye itekhnoloji yememori ye-NOR uhlobo lweflash kunye nenxalenye yemarike ye-DRAM, nangona kunjalo, omnye wemicelimngeni kwindlela yokukalwa ngokukhawuleza kukunqongophala kweeseli ze-hermetic ezinokuthi ziveliswe ukunciphisa ukusetha kwakhona kwangoku.. Ukusetha kwakhona imisinga esezantsi kunokunciphisa ukusetyenziswa kwamandla ememori, Yandisa ubomi bebhetri kwaye wandise umda wedatha, zonke iimpawu ezibalulekileyo zedatha-centric yanamhlanje, umthengi ophathwayo kakhulu

 

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