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Plansee launches MoNa sputtering targets to effectively improve the efficiency of CIGS cells

202117 no setepa 2010

攀时推出MoNa溅射靶材 有效提高CIGS电池效率

According to the latest report, Plansee High Performance Materials has recently launched a MoNa sputtering target with high purity and uniform fine microstructure..The results of a joint test conducted with the Swiss Federal Material Science and Technology Laboratory (Empa) show that the performance of MoNa sputtering targets is better than other similar targets.After using the sodium doped molybdenum layer, the efficiency of CIGS solar cells is said to have been greatly improved.

  At present, there are many problems in the industry.The reduction in the production cost per watt in US dollars is one of the severe challenges encountered by CIGS solar module manufacturers; especially in the sputtering process, one of the important technologies for CIGS material deposition, it is extremely important for the improvement of conversion rate. The role of.Unlike the high lateral homogeneity of sputtered deposited films,Te fâ tau'a'au'auNormally it has corrosive properties and does not have homogeneity, which is caused by different plasma densities.Therefore, even if there is enough material in most of the target area, some targets have to be replaced.To overcome this shortcoming, “canine-bonetargets with different outer diameters—rotating targets and targets with different thicknesses—are one of the solutions to prolong the life of the target and the replacement cycle..

  For this, Plansee has produced a solution.Changing the sputtering system from a planar structure to a rotating target can effectively increase the utilization rate of the target from 30% ia 70%, thereby saving the use of expensive raw materials.The back contact molybdenum deposition done by a single-piece molybdenum rotating target made of pure molybdenum has an additional benefit: tera ïa, there is no need to use expensive welding materials to connect the molybdenum material to the stainless steel tube.In addition, higher sputtering energy up to 30 kW/m can also be used in the process.This causes a high thermal load, and the welding target material cannot withstand this thermal load: the commonly used welding material is indium, and this material is melted at 156°C, so the molybdenum target material can Eliminate the risk of peeling.Higher energy reduction can also achieve a higher deposition rate and improve the characteristics of the film, such as increasing electrical conductivity, e te tahi atu â..



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