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The principle of sputtering target magnetron sputtering



Magnetron sputtering principle: add an orthogonal magnetic field and electric field between the sputtered target (cathode) and the anode, and the sputtering target is filled with the required inert gas (usually Ar gas) in the high vacuum chamber. The permanent magnet forms a 250-350 Gauss magnetic field on the surface of the target material, and forms an orthogonal electromagnetic field with the high-voltage electric field..

  Under the action of the electric field, Ar gas ionizes into positive ions and electrons. A certain negative high voltage is applied to the target. The electrons emitted from the target are affected by the magnetic field and the ionization probability of the working gas increases, forming a high-density plasma near the cathode. Under the action of Lorentz force, Ar ions accelerate to the target surface and bombard the target surface at a high speed, so that the atoms sputtered out of the target follow the principle of momentum conversion and fly away from the target surface with higher kinetic energy. Substrate deposition into film. Magnetron sputtering is generally divided into two types: DC sputtering and radio frequency sputtering. The principle of DC sputtering equipment is simple. When sputtering metal, its rate is also fast..

  The application range of radio frequency sputtering is more extensive. In addition to sputtering conductive materials, non-conductive materials can also be sputtered. At the same time, it can also conduct reactive sputtering to prepare compound materials such as oxides, nitrides, and carbides..When the frequency of the sputtering target’s radio frequency is increased, it becomes microwave plasma sputtering. At present, electron cyclotron resonance (ECR) type microwave plasma sputtering is commonly used..

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