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Principle of magnetron sputtering sputtering target

2021年8月31日

 

Principle of sputtering target magnetron sputtering:

  An orthogonal magnetic field and electric field are added between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is filled in the high vacuum chamber. The permanent magnet forms 250-350 on the surface of the target material. The Gaussian magnetic field, and the high-voltage electric field form an orthogonal electromagnetic field.

  Under the action of the electric field, Ar gas ionizes into positive ions and electrons. A certain negative high voltage is applied to the target. The electrons emitted from the target are affected by the magnetic field and the ionization probability of the working gas increases, forming a high-density plasma near the cathode. Under the action of Lorentz force, Ar ions accelerate to the target surface and bombard the target surface at a high speed, so that the atoms sputtered out of the target follow the principle of momentum conversion and fly away from the target surface with higher kinetic energy. Substrate deposition into film.

  Magnetron sputtering is generally divided into two types: tributary sputtering and radio frequency sputtering. The principle of tributary sputtering equipment is simple, and its rate is also fast when sputtering metals..The application range of radio frequency sputtering is more extensive. In addition to sputtering conductive materials, non-conductive materials can also be sputtered. At the same time, it can also conduct reactive sputtering to prepare compound materials such as oxides, nitrides, and carbides..If the frequency of the radio frequency is increased, it becomes microwave plasma sputtering. At present, electron cyclotron resonance (ECR) type microwave plasma sputtering is commonly used..

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