Welcome to our website
0086-18429179711 [email protected]

Industrial news

» News » Industrial news

Magnetron sputtering hari

2021年10月29日

1) Tsarin Magnetron sputtering.
A cikin sandar manufa ta sputtered (katode) da anode tsakanin ƙari na magnetic orthogonal filin lantarki, a cikin wani babban ɗaki mai cike da iskar gas da ake buƙata (yawanci Ar gas), m maganadiso a cikin manufa abu surface don samar da wani Magnetic filin na 250 ~ 350 gauss, tare da babban ƙarfin wutar lantarki don samar da filin lantarki na orthogonal. Karkashin aikin wutar lantarki, Ar gas yana ionized zuwa ions masu kyau da kuma electrons, an ƙara maƙasudin tare da wani babban ƙarfin wuta mara kyau, electrons daga maƙasudin suna ƙarƙashin aikin filin maganadisu kuma ionization na iskar gas yana ƙaruwa., An kafa babban ƙwayar plasma a kusa da cathode, Ar ions suna haɓaka ƙarƙashin aikin ƙarfin Lorentz kuma suna tashi zuwa saman da aka yi niyya, bombarding saman manufa tare da babban gudun sosai, ta yadda kwayoyin zarra da aka fantsama daga cikin manufa su bi ka'idar juzu'i mai girma tare da babban Atom ɗin da aka fantsama akan manufa su bi ka'idar canjin makamashin motsa jiki kuma su tashi daga saman abin da ake niyya zuwa ga substrate don ajiye fim.. Magnetron sputtering gabaɗaya ya kasu kashi biyu: DC sputtering da RF sputtering, inda ka'idar DC sputtering kayan aiki ne mai sauki da kuma kudi ne da sauri lokacin sputtering karafa. Farashin RF, a wannan bangaren, za a iya amfani da shi a cikin aikace-aikace da yawa kuma yana iya sputter kayan da ba sa aiki ban da kayan aikin lantarki., kazalika da reactive sputtering ga shiri na fili kayan kamar oxides, nitrides da carbides. Idan mitar RF ya ƙaru zai zama mai zubar da jini na microwave, yau, Abubuwan da aka saba amfani da su sune resonance electron cyclotron (ECR) buga microwave plasma sputtering.
2) Nau'in magnetron sputtering hari.
Metal sputtering shafi manufa, gami sputtering shafi manufa, yumbu sputtering shafi manufa, haura yumbu sputtering manufa, carbide yumbu sputtering manufa, fluoride yumbu sputtering manufa, nitride yumbu sputtering manufa, oxide yumbu manufa, selenide yumbu sputtering manufa, silicate yumbu sputtering manufa, manufa sulfide yumbu sputtering manufa, telluride yumbu sputtering manufa, sauran yumbu yumbu, chromium-doped wani silicon oxide yumbu hari (Cr-SiO), indium phosphide hari (InP), kai hari arsenide (PbAs), indium arsenide hari (InAs). [2]
Muryar Editan Yankunan Aikace-aikace
Kamar yadda duk muka sani, yanayin ci gaban fasaha na kayan da aka yi niyya yana da alaƙa da haɓaka haɓakar fasahar fina-finai na bakin ciki a cikin masana'antar aikace-aikacen ƙasa, kuma kamar yadda masana'antar aikace-aikacen ke haɓaka fasaha a cikin samfuran fina-finai na bakin ciki ko sassan, yakamata fasahar kayan aiki da manufa suma ta canza. Misali, Ic masana'antun. A cikin 'yan lokutan sadaukar da ci gaban low resistivity jan karfe wayoyi, ana sa ran zai maye gurbin ainihin fim ɗin aluminum a cikin ƴan shekaru masu zuwa, ta yadda ci gaban maƙasudin jan ƙarfe da abin da ake buƙata na shingen shingen da ake buƙata zai zama cikin gaggawa. Bugu da kari, a cikin 'yan shekarun nan, allon allo (FPD) ya maye gurbin bututu na cathode ray na asali (CRT) tushen kwamfuta duba da talabijin kasuwar. Hakanan zai ƙara haɓaka fasaha da buƙatun kasuwa don manufofin ITO. Bugu da kari, a cikin fasahar ajiya. Babban yawa, Hard faifai mai girma, Buƙatar fayafai na gani mai girma da aka sake rubutawa yana ci gaba da ƙaruwa. Duk waɗannan sun haifar da canje-canje a cikin buƙatun masana'antar aikace-aikacen don kayan manufa. A cikin masu zuwa za mu gabatar da manyan wuraren aikace-aikacen kayan aiki, da kuma yanayin ci gaban abubuwan da aka yi niyya a waɗannan yankuna.
Microelectronics
Masana'antar semiconductor tana da mafi kyawun buƙatun inganci don fim ɗin sputtering manufa na kowace masana'antar aikace-aikace. Yau, siliki wafers har zuwa 12 inci (300 epitodes) ana kera su. yayin da nisa na haɗin haɗin gwiwar ke raguwa. Abubuwan buƙatun masana'antun wafer silicon don manyan masu girma dabam, babban tsarki, ƙananan rarrabuwa da hatsi masu kyau suna buƙatar cewa makasudin da aka ƙera suna da mafi kyawun ƙananan ƙwayoyin cuta. An gano diamita na barbashi na crystalline da daidaituwar maƙasudin a matsayin maɓalli mai mahimmanci da ke shafar adadin adadin fim ɗin.. Bugu da kari, tsarkin fim din ya dogara sosai akan tsarkin abin da ake nufi. A lokacin baya, a 99.995% (4N5) Maƙasudin jan ƙarfe mai tsafta na iya samun damar biyan buƙatun masana'antun na'ura don aikin karfe 0.35 na yamma, amma ba zai iya biyan bukatun tsarin 0.25um na yau ba, yayin da 0.18um} fasaha ko ma tsari na 0.13m don marasa ƙima zai buƙaci tsaftataccen manufa 5 ko ma 6N ko fiye. Copper idan aka kwatanta da aluminum, jan karfe yana da mafi girma juriya ga electromigration da ƙananan resistivity saduwa! Tsarin jagora yana buƙatar ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan 0.25um amma yana kawo tare da shi wasu matsalolin: Ƙarfin mannewa na jan karfe zuwa kayan dielectric kwayoyin halitta yana da ƙasa. Kuma mai sauƙin amsawa, sakamakon yin amfani da guntu layin haɗin gwiwar jan karfe ya lalace kuma ya karye. Domin magance wadannan matsalolin, da bukatar kafa wani shinge Layer tsakanin jan karfe da dielectric Layer. Katange Layer kayan gabaɗaya ana amfani da babban narkewa, high resistivity na karfe da mahadi, don haka kauri daga cikin toshe Layer bai wuce 50nm ba, da jan karfe da dielectric abu mannewa yi yana da kyau. Haɗin haɗin gwiwar tagulla da haɗin haɗin aluminum na abin toshewa ya bambanta. Ana buƙatar haɓaka sabbin kayan aikin da aka yi niyya. Haɗin haɗin jan ƙarfe na shingen toshewa tare da kayan manufa ciki har da Ta, W, TaSi, WSi, da dai sauransu. Amma Ta, W su ne karafa masu jujjuyawa. Samar da yana da matukar wahala, yanzu yana karatun molybdenum, chromium da sauran zinariya na Taiwan a matsayin madadin kayan.
Don nuni
Fitar panel (FPD) sun yi tasiri sosai a kan na'urar lura da kwamfuta da kasuwar talabijin a tsawon shekaru, yafi a cikin nau'i na cathode ray tubes (CRT), wanda kuma zai haifar da fasaha da buƙatun kasuwa na ITO. Akwai nau'ikan maƙasudin iTO guda biyu da ake samu a yau. Daya shine amfani da nano-state indium oxide da tin oxide foda gauraye da sintered, daya shine amfani da indium tin alloy manufa. Za a iya amfani da makasudin indium-tin gami don fina-finan bakin ciki na ITO ta hanyar ba da amsawa ta DC, amma da manufa surface zai oxidise da kuma rinjayar sputtering kudi, kuma ba shi da sauƙi a sami girman girman maƙasudin zinare na Taiwan. A zamanin yau, Hanyar farko ana amfani da ita gabaɗaya don samar da manufofin ITO, amfani da L}IRF mai amsawa sputtering shafi. Yana da saurin ajiya mai sauri. Kuma zai iya sarrafa kaurin fim ɗin daidai, high watsin, daidaito mai kyau na fim din, da karfi adhesion zuwa substrate, da dai sauransu. l. Amma matsalolin samar da kayan da aka yi niyya, wanda shine saboda indium oxide da tin oxide ba su da sauƙi a haɗa su tare. ZrO2, Bi2O3 da CeO ana amfani da su gabaɗaya azaman abubuwan haɓakawa kuma suna iya samun maƙasudi da yawa. 93% zuwa 98% na darajar ka'idar. Ayyukan fina-finai na ITO da aka kafa ta wannan hanya ya dogara sosai akan abubuwan da aka ƙara. Masana kimiyya na Japan suna amfani da Bizo a matsayin ƙari, Bi2O3 yana narkewa a 820Cr kuma ya canza sama da zafin jiki na l500C.. Wannan yana ba da damar ingantacciyar manufa ta ITO da za a samu a ƙarƙashin yanayin ɓarkewar lokaci na ruwa. Haka kuma, albarkatun oxide da ake buƙata ba dole ba ne ya zama nanoparticles, wanda ke sauƙaƙe tsarin farko. Cikin 2000, hukumar tsare-tsare ta kasa, Ma'aikatar Kimiyya da Fasaha Ma'aikatar Kimiyya da Fasaha a cikin “ci gaban fifiko na yau da kullun na masana'antar bayanai jagora mahimman fannonin jagora”, ITO manyan kayan da aka yi niyya kuma an haɗa su.
Domin ajiya
A cikin fasahar ajiya, da ci gaban high-yawa, Hard disk mai ƙarfi yana buƙatar babban adadin katuwar kayan fim ɗin magnetoresistive, da CoF ~ Cu multilayer fim ɗin hadaddiyar giant ɗin da aka yi amfani da shi sosai a yau. Har yanzu ana ci gaba da haɓaka kayan haɗin gwal na TbFeCo da ake buƙata don fayafai na maganadisu, kuma fayafai na maganadisu da aka yi daga gare shi suna da babban ƙarfin ajiya, tsawon rai kuma ana iya goge shi akai-akai ba tare da lamba ba. Fayafai na maganadisu da aka haɓaka a yau suna da tsarin fim ɗin da aka haɗa Layer na TbFeCo/Ta da TbFeCo/Al. Kusurwar juyi na Kerr na tsarin TbFeCo/AI ya kai 58, yayin da TbFeCofFa zai iya zama kusa da 0.8. An gano cewa ƙarancin ƙarfin maganadisu na abin da ake nufi da babban ƙarfin fitarwa na AC mai ƙarfi l yana tsayayya da ƙarfin lantarki.
Germanium antimony telluride tushen canjin lokaci memories (PCM) sun nuna gagarumin yuwuwar kasuwanci azaman madadin fasahar ƙwaƙwalwar ajiya don nau'in walƙiya na NO da ɓangaren kasuwar DRAM, duk da haka, daya daga cikin kalubalen da ke kan hanyar da za a yi saurin kisa shine rashin cikakken sel hermetic da za a iya samar da su don kara rage sake saitin halin yanzu.. Ƙananan sake saitin igiyoyi na iya rage yawan ƙarfin ƙwaƙwalwar ajiya, tsawaita rayuwar baturi da ƙara yawan bandwidth na bayanai, duk mahimman abubuwan da ke da mahimmancin bayanai na yau, mabukaci mai ɗaukar nauyi

 

Maybe you like also

  • Categories

  • Recent News & Blog

  • Share to friend

  • COMPANY

    Shaanxi Zhongbei Titanium Tantalum Niobium Metal Material Co., Ltd. is a Chinese enterprise specializing in the processing of non-ferrous metals, serving global customers with high quality products and perfect after-sales service.

  • Tuntube Mu

    Wayar hannu:86-400-660-1855
    E-mail:[email protected]
    Yanar gizo:www.chn-ti.com